NDLI: Power density comparative analysis concerning to three transistor technologies applied to a CCM PFC BOOST converter using optimization techniques

Content Provider	IEEE Xplore Digital Library
Author	Sartori, H.C. Beltrame, F. Figueira, H.H. Baggio, J.E. Pinheiro, J.R.
Copyright Year	2013
Description	Author affiliation: Power Electron. & Control Group, Fed. Univ. of Santa Maria, Santa Maria, Brazil (Sartori, H.C.; Beltrame, F.; Figueira, H.H.; Baggio, J.E.; Pinheiro, J.R.)
Abstract	A transistor technology comparative analysis applied to a CCM PFC BOOST converter, aiming to identify the technology that shows the highest volumetric power density for a particular application is discussed. For this analysis, a comparison among three different transistors technologies namely traditional MOSFET, CoolMOSC3 and CoolMOSCP is performed. The calculation of the transistors losses and its heat transfer system are discussed. An analysis of different operation points (Δi @ fs) is performed, pointing the optimum point for the maximum power density for each transistor technology. From these derivative points the comparisons are done. The power diode and the magnetic material utilized for the Boost inductor and EMI filter cores are the same for all three designs.
Sponsorship	IEEE Power Electron. Soc.
Starting Page	1317
Ending Page	1323
File Size	1421331
Page Count	7
File Format	PDF
ISBN	9781479902729
ISSN	21758603
DOI	10.1109/COBEP.2013.6785286
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-10-27
Publisher Place	Brazil
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power density MOSFET Power system measurements Density measurement Switch losses Switching loss Capacitance Boost converter Heat sinks Heat sink design Transistor technologies
Content Type	Text
Resource Type	Article

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