NDLI: Grating-coupled external cavity quantum cascade semiconductor lasers

Content Provider	IEEE Xplore Digital Library
Author	Luo, G.P. Peng, C. Le, H.Q. Hwang, W.-Y. Ishaug, B. Um, J. Baillargeon, J.N.
Copyright Year	2001
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Houston Univ., TX, USA (Luo, G.P.)
Abstract	Summary form only given. Widely wavelength-tunable mid-infrared lasers are useful for broadband spectral sensing. Grating-coupled external cavity InAs/InAsSb or GaSb/InAsSb 3-4 /spl mu/m lasers have been demonstrated with large tuning range. The work investigates the wavelength tuning property of InGaAs/InAlAs quantum cascade lasers using grating-coupled external cavity. An objective is to determine the optimal condition for threshold and power efficiency as a function of wavelength and temperature. Knowledge of these conditions can help choosing a wafer design for which a DFB or DBR laser can be fabricated for a specific a wavelength and temperature range. The materials were grown by MBE and fabricated into 10-12 /spl mu/m-wide, 0.5-2 mm-long ridge-waveguide lasers. Typical free-running power was /spl sim/350 mW peak at 80 K and /spl sim/ few 10's mW above 220 K.
Sponsorship	IEEE/Lasers & Electro-Opt. Soc.
Starting Page	55
Ending Page	56
File Size	264735
Page Count	2
File Format	PDF
ISBN	1557526621
DOI	10.1109/CLEO.2001.947456
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Optical Soc. Of America
Subject Keyword	Temperature Semiconductor lasers Optical design Indium gallium arsenide Indium compounds Gratings Laser tuning Gas lasers Distributed Bragg reflectors Quantum cascade lasers
Content Type	Text
Resource Type	Article

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