NDLI: ANFIS-based computation to study the nanoscale circuit including the hot-carrier and quantum confinement effects

Content Provider	IEEE Xplore Digital Library
Author	Bentrcia, T. Djeffal, F. Arar, D. Meguellati, M.
Copyright Year	2013
Description	Author affiliation: Dept. of Electron., Univ. of Batna, Batna, Algeria (Djeffal, F.; Arar, D.) \|\| Dept. of Phys., Univ. of Batna, Batna, Algeria (Bentrcia, T.; Meguellati, M.)
Abstract	In this paper, we present a new approach based on fuzzy logic for the modeling of the subthreshold swing factor by using the Adaptive Network Fuzzy Inference System (ANFIS). It is also assumed that the nanoscale Double Gate (DG) MOSFET device under study is subject to both hot-carrier and quantum effects. Afterward, an analytical expression is deduced for the transconductance parameter from the subthreshold swing fuzzy model. The developed framework is then adopted as a basis of studying the degradation mechanism of a single transistor amplifier. The obtained results show good agreement with the numerical simulations provided by ATLAS 2D-simulator. The proposed model presented in this paper offers a simple and accurate approach to study the nanoscale CMOS-based circuit behavior including the hot-carrier damage and quantum effects.
Sponsorship	IEEE Tunisia Sect.
Starting Page	1
Ending Page	5
File Size	218985
Page Count	5
File Format	PDF
ISBN	9781467358125
e-ISBN	9781467358149
DOI	10.1109/ICMSAO.2013.6552680
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-28
Publisher Place	Tunisia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Semiconductor device modeling MOSFET Circuit design Fuzzy modeling Hot carrier effects Hot-carrier-degradation effect Integrated circuit modeling Transconductance
Content Type	Text
Resource Type	Article

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