NDLI: Building blocks for an X-Band SiGe BiCMOS T/R module

Content Provider	IEEE Xplore Digital Library
Author	Dinc, T. Kalyoncu, I. Kaynak, M. Gurbuz, Y.
Copyright Year	2013
Description	Author affiliation: Fac. of Eng. & Natural Sci. - FENS, Orhanli - Tuzla, Istanbul, Turkey (Dinc, T.; Kalyoncu, I.; Gurbuz, Y.) \|\| IHP, Frankfurt (Oder), Germany (Kaynak, M.) This paper presents the building blocks of an X-Band T/R module in a 0.25 μm SiGe BiCMOS technology for phased arrays. The T/R module consists of a T/R switch, two SPDT switches, a power amplifier, a low noise amplifier, a phase shifter and a variable gain amplifier (not presented). The T/R switch, SPDT switch and the phase shifter are implemented using CMOS transistors whereas the PA and LNA are based on SiGe HBTs. The designed T/R switch achieves minimum insertion loss of 2.1 dB, an isolation of 42 dB and has an input $P_{1dB}$ of 27.4 dBm at 10 GHz. The SPDT switch has less than 2.2 dB loss at X-Band. The PA resulted in a small-signal gain of 25 dB and a saturated output power of 23.2 dBm with 25 % PAE. The LNA has 1.65 dB noise figure (mean) with a gain more than 19 dB at X-Band. Lastly, the phase shifter achieves simulated RMS phase and gain errors of 1°-3.5° and 0.8-1.8 dB at X-Band.
Sponsorship	IEEE Microwave Theory Tech. Soc.
Starting Page	97
Ending Page	99
File Size	1022360
Page Count	3
File Format	PDF
ISBN	9781467331043
e-ISBN	9781467329316
DOI	10.1109/WiSNet.2013.6488646
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phase shifters Switches Low noise amplifier Phased array T/R module Loss measurement Phase shifter Silicon germanium CMOS switch Power amplifiers Insertion loss Power amplifier Gain
Content Type	Text
Resource Type	Article

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