NDLI: Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts

Content Provider	IEEE Xplore Digital Library
Author	Riyadi, M. Tan, M.L.P. Hashima, A.M. Arora, V.K.
Copyright Year	2010
Description	Author affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, UTM Skudai, Johor 81310, Malaysia (Riyadi, M.; Tan, M.L.P.; Hashima, A.M.; Arora, V.K.)
Abstract	Ballistic transport is collision-free carriers drift in a conducting channel whose ballistic length LB is smaller than the scattering-limited mean free path ℓB. In such channels, the probability of scattering is still finite. The probability that a carrier after being injected from the Ohmic contacts will undergo collision in traversing a ballistic length LB is exp (−LB /ℓB. The probability that it will go ballistic (collision-free) is (1- exp (−LB/ ℓB)). This modifies the traditional long-channel mobility µ∞ to a size-limited mobility µL given by [1] µL = µ∞[1- exp(−LB / ℓB)] The ballistic mean free path ℓ differs from the channel mean free path ℓ∞ as contacts play a predominant role in the ballistic transport. The carriers are injected from the metallic contacts at a Fermi velocity νF for which the probability of tunnelling through the metal-semiconductor contact is the highest. This Fermi velocity is 2.0 × $10^{6}$ m/s for the Fermi energy of 11.6 eV for an Al contact [2]. With this injection velocity νinj the ballistic mean free path is given by ℓB = ℓ∞ (νinj/ νm) where νm is the mobility velocity appropriate to 2-D electron gas [3]. ℓB > ℓ∞ was identified in the experiments of Luskawoski et. al [4]. A pocket mean free path ℓP was added to ℓ∞ to get a ballistic mean free path ℓB =ℓ℞ +ࡁP that is not consistent with the scattering theory for two reasons. Firstly, mean free paths from two distinct regions cannot be combined. Secondly, the inverse mean free paths are normally combined as $ℓ^{−1}$ = $ℓ^{−1}$ + ℓP $^{−1}$
Starting Page	1
Ending Page	2
File Size	370649
Page Count	2
File Format	PDF
ISBN	9781424488537
e-ISBN	9781424488544
DOI	10.1109/ESCINANO.2010.5701035
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-01
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ohmic contacts
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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