NDLI: Growth of GaN on SiC/Si substrates using AlN buffer layer under low III/V source gas ratio by hot-mesh CVD

Content Provider	IEEE Xplore Digital Library
Author	Nagata, K. Tamura, K. Suemitsu, M. Narita, Y. Ito, T. Endoh, T. Nakazawa, H. Hashim, A.M. Yasui, K.
Copyright Year	2010
Description	Author affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Malaysia (Hashim, A.M.) \|\| Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 Japan (Endoh, T.) \|\| Department of Electrical Eng., Nagaoka University of Technol. Japan (Nagata, K.; Tamura, K.; Narita, Y.; Yasui, K.) \|\| Faculty of Science & Technology, Hirosaki University, 036-8561, Japan (Nakazawa, H.) \|\| Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 Japan (Suemitsu, M.; Ito, T.)
Abstract	GaN is a widegap compound semiconductor, which is useful for optoelectronic devices operating in short wavelengths and at high-temperatures. The GaN films are usually grown on sapphire substrates at growth temperatures higher than 1000°C using MOCVD method [1–3]. For the growth of GaN films with excellent crystallinity and optical property, high V/III source gas ratio (NH3/TMG>10,000) is required due to the decomposition-resistant property of nitrogen source-gas such as NH3. The reduction of the source gas consumption is strongly desired from the viewpoint of the resource savings. For the GaN growth at low V/III source gas ratios, excitation of NH3 is required. Among several methods, catalytic reaction of hot tungsten (W) wire surface with NH3 is very promising, because it produces high-density NHx radicals, in particular when the W fine wires with a mesh structure are used [4]. Recently, heteroepitaxial growth of GaN films on Si substrates has been attempted, aiming at fabrication of various GaN electronic devices at a low cost [5–8]. A large lattice mismatch, however, also exists between GaN and Si, which is similar to the case between GaN and sapphire. In order to overcome this problem, insertion of a thin SiC buffer layer between them is useful [9]. In our previous studies, GaN films were grown on SiC/Si(111) substrates by hot-mesh CVD using TMG and NH3. Photoluminescence spectra of GaN films grown on the SiC buffer layer, however, showed relatively strong yellow luminescence at RT [10]. In this study, in order to further improve the crystallinity and the optical property, the insertion of AlN buffer layer between GaN and SiC layer was attempted.
Starting Page	1
Ending Page	2
File Size	401261
Page Count	2
File Format	PDF
ISBN	9781424488537
e-ISBN	9781424488544
DOI	10.1109/ESCINANO.2010.5701027
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-01
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Three dimensional displays Optical films Gallium nitride
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates

Growth parameters optimization of GaN high electron mobility transistor structure on silicon carbide substrate

Improved GaN-on-SiC Transistor Thermal Resistance by Systematic Nucleation Layer Growth Optimization

Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE

Heteroepitaxial growth of GaN, AlN, and AlGaN layers on SiC substrates by HVPE

Molecular beam epitaxial growth of GaN on 3C-SiC/Si(111) substrates using a thick AlN buffer layer

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

High performance high reliability AlN/GaN DHFET

Growth of GaN on SiC/Si substrates using AlN buffer layer under low III/V source gas ratio by hot-mesh CVD

Similar Documents

Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates

Growth parameters optimization of GaN high electron mobility transistor structure on silicon carbide substrate

Improved GaN-on-SiC Transistor Thermal Resistance by Systematic Nucleation Layer Growth Optimization

Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE

Heteroepitaxial growth of GaN, AlN, and AlGaN layers on SiC substrates by HVPE

Molecular beam epitaxial growth of GaN on 3C-SiC/Si(111) substrates using a thick AlN buffer layer

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

High performance high reliability AlN/GaN DHFET

Growth of GaN on SiC/Si substrates using AlN buffer layer under low III/V source gas ratio by hot-mesh CVD