NDLI: A fully logic CMOS compatible non-volatile memory for low power IoT applications

Content Provider	IEEE Xplore Digital Library
Author	Yu Wang Junhui Xiang Xianliang Chen Tao Yang Na Yan Hao Min
Copyright Year	2015
Description	Author affiliation: State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China (Yu Wang; Junhui Xiang; Xianliang Chen; Tao Yang; Na Yan; Hao Min)
Abstract	This paper presents a 512-bit low power electrically programmable embedded non-volatile memory (eNVM) for the Internet of Things (IoT) applications. A novel memory bit cell which is fully compatible to the CMOS logic process is developed using dual tunneling gate structure. Costumer designed lateral double diffused MOS transistor (LDMOS) is proposed in a novel high voltage management circuit to improve the reliability and safety of the memory established by thin gate oxide transistors. In charge pump design, a frequency step-up scheme is proposed to control the current surge during writing operation, thus large voltage droops in the power supply is prevented, improving the stability of the system. The memory is implemented in a standard 0.13μm CMOS technology process. Measured results indicate that under the supply voltage of 1.2 V, it consumes 9.2 μW (22.9 μW) at the read (write) rate of 6.78 Mb/s (8 kb/s). Endurance characteristics under 100k program cycles stress test and data retention characteristics of up to 10 years are demonstrated.
Starting Page	98
Ending Page	103
File Size	440375
Page Count	6
File Format	PDF
ISBN	9781467380560
e-ISBN	9781467380584
DOI	10.1109/IOT.2015.7356553
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-26
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Decision support systems ENVM Dual tunneling gate Charge pumps Conferences Low power Logic CMOS compatible Internet of things LDMOS Logic gates Tunneling CMOS integrated circuits Frequency step-up charge pump
Content Type	Text
Resource Type	Article

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