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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mu-Chun Wang Chong-Kuan Du Min-Ru Peng Shea-Jue Wang Shuang-Yuan Chen Chuan-Hsi Liu Cheng, O. Huang, L.S. Shih Ching Lee |
| Copyright Year | 2013 |
| Description | Author affiliation: Dept. of Mechatron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan (Chuan-Hsi Liu) || Reliability Dept./ATD Device Div., United Microelectron. Corp., Hsinchu, Taiwan (Huang, L.S.; Shih Ching Lee) || Grad. Inst. of Mechatron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan (Mu-Chun Wang; Min-Ru Peng; Shuang-Yuan Chen; Cheng, O.) || Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan (Chong-Kuan Du) || Dept. of Mater. & Resources Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan (Shea-Jue Wang) |
| Abstract | Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed. |
| Sponsorship | IEEE Tainan Sect. ED Chapt. |
| Starting Page | 389 |
| Ending Page | 392 |
| File Size | 1252516 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467330367 |
| e-ISBN | 9781467330374 |
| DOI | 10.1109/ISNE.2013.6512375 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-02-25 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFET Annealing HK DPN Metals Subthreshold swing Dielectrics PDA Logic gates Market research Plasma temperature Gate-last Interface |
| Content Type | Text |
| Resource Type | Article |
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