NDLI: Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer

Content Provider	IEEE Xplore Digital Library
Author	Ali, A.H. Shuhaimi, A. Hassan, Z.
Copyright Year	2012
Description	Author affiliation: Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur, Malaysia (Shuhaimi, A.) \|\| Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang, Malaysia (Ali, A.H.; Hassan, Z.)
Abstract	This paper reports on structural characterization of InGaN-based light-emitting diode (LED) with AlN/InGaN buffer layer, AlN/GaN multi layer (ML) intermediate layer and AlGaN/GaN strain layer superlattices (SLS). The LED was epitaxially grown on Si (111) by metal organic chemical vapor deposition (MOCVD) that comprises of InGaN/InGaN multi quantum-wells (MQWs) active layer sandwiched between InGaN under-layer and over-layer. Phase analysis (PA) 2Theta-scan x-ray diffraction (XRD) proved the existence of single crystal GaN (0002) and (0004) at 34.5° and 73.2°, respectively. X-ray rocking curve (XRC) phi-scan showed six-fold symmetric diffraction peaks confirming the wurtzite GaN structures with consistent angular gaps of ∼60°. The red shift of E2 (high) GaN with respect to the standard value of strain-free bulk GaN denotes the presence of compressive strain in the epilayer. Surface morphology by atomic force microscope (AFM) shows a smooth surface with low RMS roughness value, thus proved a good quality of InGaN-based LED structure grown on Si.
Starting Page	6
Ending Page	9
File Size	250838
Page Count	4
File Format	PDF
ISBN	9781467314619
e-ISBN	9781467314633
DOI	10.1109/ICP.2012.6379837
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-01
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Surface morphology Crystals Light emitting diodes Silicon Gallium nitride Substrates Quantum well devices
Content Type	Text
Resource Type	Article

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