NDLI: An improved SiC-JFET body diode model for circuit modeling applications

Content Provider	IEEE Xplore Digital Library
Author	Mtimet, Sameh Khachroumi, Sofiane Ben Salah, Tarek Kourda, Ferid
Copyright Year	2015
Description	Author affiliation: Institut Supérieur des Sciences Appliquées et de Technologie de Kairouan, ISSAT-Kairouan, Tunisie (Khachroumi, Sofiane) \|\| Université de Tunis EL Manar, Ecole Nationale d'Ingénieurs de Tunis, LR11ES15Laboratoire des Systémes Electriques, 1002, Tunis, Tunisie (Mtimet, Sameh; Ben Salah, Tarek; Kourda, Ferid)
Abstract	The physical-based analytical model proposed by Lauritzen and Ma (LM) in 1993 is used to simulate power silicon diode (PiN). Recent, semi-conductor materials with wide band gap are used to improve power system performance. This paper presents, on the one hand, the limit of the physical based analytical LM PiN diode model for silicon carbide diode PiN. On the other hand, an improved of LM model is presented to simulate different wide band gap semi-conductor such as silicon carbide, SiC. Experimental forward and reverse recovery data are confronted with the enhanced model simulations at different operating conditions. Different silicon carbide diodes are tested to validate the ameliorated model. Experimental and simulation results are discussed.
Starting Page	1
Ending Page	6
File Size	359693
Page Count	6
File Format	PDF
ISBN	9780956715753
DOI	10.1109/ICMIC.2015.7409418
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-12-18
Publisher Place	Tunisia
Access Restriction	Subscribed
Rights Holder	University of Al Qayrawan, Tunisia
Subject Keyword	Analytical models Voltage measurement Silicon carbide Simulation Biological system modeling Experimental Model Mathematical model SiC-JFET body diode Integrated circuit modeling
Content Type	Text
Resource Type	Article

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