NDLI: 2-D front- and back-gate potential distribution model of submicrometer VFD SONFET

Content Provider	IEEE Xplore Digital Library
Author	Sviličić, B. Jovanović, V. Suligoj, T.
Copyright Year	2010
Description	Author affiliation: Faculty of Maritime Studies, University of Rijeka, Studentska ulica 2, 51000, Croatia (Sviličić, B.) \|\| Faculty of Electrical Engineering and Computing, University of Zagreb, Unska 3, 10000, Croatia (Jovanović, V.; Suligoj, T.)
Abstract	Analytical model for the two-dimensional (2-D) front-gate and the back-gate surface potential distribution of the vertical fully-depleted (VFD) silicon-on-nothing (SON) FET is developed. The analytical expressions of the front-gate and the back-gate potential distributions are derived by solving 2-D Poisson's equation using boundary conditions that are special for the VFD SONFET and assuming a second-order polynomial function for the potential distribution in the device body. The accuracy of the analytical model is verified by comparing the model predictions with the 2-D numerical device simulation results obtained using Medici and very good agreement is obtained.
Starting Page	43
Ending Page	47
File Size	100201
Page Count	5
File Format	PDF
ISBN	9781424477630
e-ISBN	9789532330502
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-24
Publisher Place	Croatia
Access Restriction	Subscribed
Rights Holder	MIPRO
Subject Keyword	Silicon on insulator technology Analytical models Insulation Poisson equations Two dimensional displays Predictive models Boundary conditions Polynomials Substrates MOSFETs
Content Type	Text
Resource Type	Article

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