NDLI: An adaptive model for the control of critical dimension in photolithography process

Content Provider	IEEE Xplore Digital Library
Author	Wei Kang Ziqiang John Mao
Copyright Year	2004
Description	Author affiliation: Dept. of Appl. Math., Naval Postgraduate Sch., Monterey, CA, USA (Wei Kang)
Abstract	In this paper, a method of adaptive modeling is studied for the photolithography process used in the semiconductor industry. Real data of the critical dimension (CD) in a shallow trench isolation area from an Intel flash manufacturing fab is used for model analysis. We focus on the problem of CD prediction in the presence of unpredictable drift. Multiple inputs are included in the model as interactive integral parts of the system. In addition, a feedback controller based on the adaptive model is designed to stabilize CID in the presence of unknown disturbances. Simulations are carried out based on the data from an Intel 8-inch fab of flash products. The results are generalized to systems with multiple outputs, in which both CD and focus indicator are controlled based on adaptive modeling. The simulation results prove that the designed controller is able to correct process drift automatically.
Starting Page	4231
Ending Page	4236
File Size	228163
Page Count	6
File Format	PDF
ISBN	0780386825
ISSN	01912216
DOI	10.1109/CDC.2004.1429416
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-12-14
Publisher Place	Bahamas
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Programmable control Adaptive control Lithography Automatic control Semiconductor device noise Virtual manufacturing Manufacturing processes Semiconductor device manufacture Electronics industry Calibration
Content Type	Text
Resource Type	Article

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