NDLI: Gas-source molecular beam epitaxy and a formulation for the growth control of a class of quaternary materials

Content Provider	IEEE Xplore Digital Library
Author	Warnick, S.C. Dahleh, M.A.
Copyright Year	1997
Description	Author affiliation: Lab. for Inf. & Decision Syst., MIT, Cambridge, MA, USA (Warnick, S.C.)
Abstract	Research in the control of gas-source molecular beam epitaxy (GSMBE) suggests that previous results for the growth of ternary III-V alloys via an alternative process, metal organic chemical vapor deposition (MOCVD), extend nicely to the problem of growing quaternary compounds of the form A/sub x/B/sub 1-x/C/sub y/D/sub 1-y/ by GSMBE. In fact, the growth control problem for ternary compounds via MOCVD turns out to be embedded in the growth control problem for quaternary compounds via GSMBE. This is striking since the dynamics of MOCVD, which are linear, differ considerably from those of GSMBE, which are strongly nonlinear. Nevertheless, structure in the models can be exploited via an appropriate change of coordinates to facilitate controller design using linear design methodologies. Resulting controllers are shown to be robust with respect to parametric model uncertainty. The experimental setup of facilities under development is also discussed in light of future applications of this work.
Starting Page	820
Ending Page	825
File Size	598847
Page Count	6
File Format	PDF
ISBN	0780341872
ISSN	01912216
DOI	10.1109/CDC.1997.650740
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-12-12
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Molecular beam epitaxial growth MOCVD Control systems Indium phosphide Laboratories Chemical technology Production Substrates Chemical processes Gases
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

High quality polishing of InP substrates

Morphological defects in InP layers grown by gas-source molecular beam epitaxy

Recent advances in chemical beam epitaxy for opto-electronic device applications

Growth of indium phosphide by solid source molecular beam epitaxy

Low temperature epitaxial growth of indium phosphide

Device quality InGaAs/InAlAs/InP heterostructures grown by gas source molecular beam epitaxy

InP homojunction solar cells grown by gas-source molecular beam epitaxy

High purity InP grown by chemical beam epitaxy

Behavior of InP growth by gas source molecular beam epitaxy on singular and vicinal substrates

Gas-source molecular beam epitaxy and a formulation for the growth control of a class of quaternary materials

Similar Documents

High quality polishing of InP substrates

Morphological defects in InP layers grown by gas-source molecular beam epitaxy

Recent advances in chemical beam epitaxy for opto-electronic device applications

Growth of indium phosphide by solid source molecular beam epitaxy

Low temperature epitaxial growth of indium phosphide

Device quality InGaAs/InAlAs/InP heterostructures grown by gas source molecular beam epitaxy

InP homojunction solar cells grown by gas-source molecular beam epitaxy

High purity InP grown by chemical beam epitaxy

Behavior of InP growth by gas source molecular beam epitaxy on singular and vicinal substrates

Gas-source molecular beam epitaxy and a formulation for the growth control of a class of quaternary materials