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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Berta, F. Hidalgo, S. Godignon, P. Rebollo, J. Millan, J. |
| Copyright Year | 1991 |
| Description | Author affiliation: Centro Nacional de Microelectron., Univ. Autonoma de Barcelona, Spain (Berta, F.; Hidalgo, S.; Godignon, P.; Rebollo, J.; Millan, J.) |
| Abstract | A self-isolated smart power process using only eight photolithographic steps has been developed. It allows the fabrication of high-voltage VDMOS and p-channel MOS transistors, a low-voltage CMOS logic, n-p-n bipolar transistors, diodes, Zeners, and high value capacitors. The VDMOS device is fabricated by a double diffused process and the same diffusion is used for the n-channel transistor well and for the VDMOS body. A process monitor chip has been fabricated and the different devices have been measured, showing the feasibility of such a technology and the excellent agreement with previously obtained simulation results.< |
| Starting Page | 263 |
| Ending Page | 266 |
| File Size | 226020 |
| Page Count | 4 |
| File Format | |
| ISBN | 0879426551 |
| DOI | 10.1109/MELCON.1991.161827 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-05-22 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Low voltage CMOS technology Fabrication MOSFETs CMOS logic circuits Logic devices Bipolar transistors Diodes MOS capacitors Monitoring |
| Content Type | Text |
| Resource Type | Article |
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