NDLI: Temperature effects on the large signal transient response of long-wavelength MQW lasers

Content Provider	IEEE Xplore Digital Library
Author	Torres Pereira, J.M.
Copyright Year	1998
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Inst. Superior Tecnico, Lisbon, Portugal (Torres Pereira, J.M.)
Abstract	In this paper we investigate the effect of temperature on the transient response of multiple quantum well (MQW) 1.3 /spl mu/m InP-InGaAsP lasers of the Fabry-Perot type when the injection current changes by steps from zero to a value above threshold. For the structure under study the rate equations were numerically solved for each temperature taking into account the appropriate values of the maximum gain, the threshold current density and the photon and carrier lifetime, which change with temperature. As expected the carrier and photon transients change with temperature, their evolution depending on the current density values considered at each temperature. When the ratio between the current density and the threshold current density is kept constant we observe that for an increase of temperature there is an increase of the amplitude and frequency of the oscillations and a decrease of their relaxation time and turn-on delay time. However for a constant current density the increase of temperature can lead to opposite conclusions.
Starting Page	1432
Ending Page	1435
File Size	369846
Page Count	4
File Format	PDF
ISBN	0780338790
DOI	10.1109/MELCON.1998.699474
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-05-18
Publisher Place	Israel
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transient response Current density Threshold current Temperature dependence Quantum well devices Laser transitions Quantum well lasers Fabry-Perot Equations Charge carrier lifetime
Content Type	Text
Resource Type	Article

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