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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zarebski, J. Dabrowski, J. |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Marine Electron., Gdynia Maritime Univ., Gdynia (Zarebski, J.; Dabrowski, J.) |
| Abstract | This paper concerns the problem of SPICE modelling of the class of silicon-carbide (SiC) Schottky diodes with thermal effects (selfheating) taken into account. Since April 2001 the SiC Schottky diodes made by Infineon Technologies have been commercially attainable. In the paper the SPICE electrothermal (including selfheating) macromodel of Infineon Technologies SiC Schottky diode is presented and detaily investigated. The considered macromodel has been verified experimentally. The silicon-carbide SDP04S60 rectifier has been tested. The nonisothermal characteristics obtained from measurements and SPICE calculations of SDP04S60 diode are compared. Due to the unacceptably large differences between measurements and calculations, some modifications of the macromodel have been proposed. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 170183 |
| Page Count | 4 |
| File Format | |
| ISBN | 9789972611001 |
| DOI | 10.1109/ICECS.2005.4633594 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-11 |
| Publisher Place | Tunisia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Schottky diodes Silicon carbide SPICE Semiconductor device measurement Semiconductor diodes Resistance Isothermal processes |
| Content Type | Text |
| Resource Type | Article |
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