NDLI: Theoretical model and computer simulation results of enhanced diffusion of high-temperature implanted aluminum in silicon carbide

Content Provider	IEEE Xplore Digital Library
Author	Gadiyak, G.V.
Copyright Year	1997
Description	Author affiliation: Inst. of Comput. Technol., Acad. of Sci., Novosibirsk, Russia (Gadiyak, G.V.)
Abstract	Wide application of silicon carbide (SiC) films in microelectronics devices makes especially important predictions of the doping profiles during and/or after thermal treatment. A macroscopic kinetic model of enhanced diffusion of aluminum in SiC films during ion bombardment at high temperature has been considered. The set of equations describing the kinetic model takes into account generation of Si and C dangling bonds during bombardment, formation of C-Al and Si-Al bonds, migration of the mobile species (aluminum) to the surface, their reactions with Si and C dangling bonds as well as their evolution from the film. Numerical simulation of the equations has allowed the total concentration profile of Al implanted into SiC to be determined, the concentration profile of Al atoms on C and Si dangling bonds, the concentration profile of mobile and immobile Al atoms. The calculations were carried out for Al implanted with 40 kev energy and an ion current density of 20 /spl mu/A/cm/sup 2/ to a dose 2/spl times/10(16) cm/sup -2/ at 1800/spl deg/C. The calculations show that the Al content in SiC did not exceed 40%. We obtained a good agreement with experimental profile of Al.
Starting Page	50
Ending Page	53
File Size	271976
Page Count	4
File Format	PDF
ISBN	0780338022
DOI	10.1109/HKEDM.1997.642329
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-08-30
Publisher Place	Hong Kong
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Computer simulation Silicon carbide Semiconductor process modeling Semiconductor films Kinetic theory Aluminum Equations Application software Microelectronics Doping profiles
Content Type	Text
Resource Type	Article

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