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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Eng-Huat Toh Wang, G.H. Ming Zhu Chen Shen Lap Chan Guo-Qiang Lo Chih-Hung Tung Sylvester, D. Chun-Huat Heng Samudra, G. Yee-Chia Yeo |
| Copyright Year | 2007 |
| Description | Author affiliation: Nat. Univ. of Singapore, Singapore (Eng-Huat Toh; Wang, G.H.; Ming Zhu; Chen Shen; Lap Chan) |
| Abstract | We report the first demonstration of an Impact Ionization nanowire multiple-gate field-effect transistor (I-MuGFET or I-FinFET). Excellent subthreshold swing of sub-5 mV/decade at room temperature was achieved. The multiple- gate structure enhances the impact ionization rate in the fin or nanowire channel, reduces the breakdown voltage and improves device performance. A silicon-germanium (SiGe) impact ionization region (I-region) is integrated on a Si or SiGe nanowire to enhance performance and reduce the breakdown voltage. A record low breakdown voltage of -4.75 V is achieved for SiGe nanowire device. Complementary pair of I-FinFETs were realized. The lower electron and hole impact-ionization threshold energy of SiGe greatly enhances the drive current of n- and p-channel devices by 3 and 2.4 folds, respectively. |
| Starting Page | 195 |
| Ending Page | 198 |
| File Size | 4289704 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424415076 |
| DOI | 10.1109/IEDM.2007.4418900 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-12-10 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Impact ionization Germanium silicon alloys Silicon germanium Nanoscale devices Electric potential Temperature Microelectronics FETs Charge carrier processes Energy consumption |
| Content Type | Text |
| Resource Type | Article |
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