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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Claiborne, L.T. Staples, E.J. Mize, J.P. |
| Copyright Year | 1970 |
| Description | Author affiliation: Texas Instruments, Dallas, Texas (Claiborne, L.T.) |
| Abstract | The silicon p-channel MOSFET has previously been characterized as a piezoresistive element. Since gmof the device varies with applied stress through modulation of surface-carrier mobility, it becomes of interest to examine the response of the device to acoustic surface waves induced in the silicon. The MOSFET has a geometry well suited for surface-wave detection since current flow is limited to the inversion layer and, in addition, the device can be fabricated with inversion layer dimensions less than λ/2 for surface waves of frequency less than 100 MHz. The devices can therefore be used to evaluate surface-wave propagation in any direction on a given silicon plane. The investigation also has practical aspects in that surface-wave detector arrays can find application as weighted tapped delay lines with weighting controlled by the application of various dc gate voltages. |
| Starting Page | 84 |
| Ending Page | 86 |
| File Size | 175304 |
| Page Count | 3 |
| File Format | |
| DOI | 10.1109/IEDM.1970.188275 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1970-10-28 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFET circuits Surface acoustic wave devices Silicon Piezoresistance Stress Acoustic devices Surface acoustic waves Geometry Acoustic signal detection Frequency |
| Content Type | Text |
| Resource Type | Article |
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