NDLI: Investigation of the switching behavior of pin-diodes using electronic analog models

Content Provider	IEEE Xplore Digital Library
Author	Illi, M.P. Beneking, H.
Copyright Year	1968
Description	Author affiliation: Technical University, Aachen, Germany (Illi, M.P.)
Abstract	An electronic analog model simulating the behaviour of diodes with pin-structure switched from forward to reverse bias is presented. Diodes with a lightly doped middle-region are used as power rectifiers, microwave modulators and step recovery diodes. Under the assumption of high injection and neutrality, the differential equations of the electrons and holes in the middle-region can be represented by a resistance-capacitance network. The conditions at the two boundaries ot the middle-region during the forward and storage period are simulated by constant current sources at the borders of the network. After the storage period the space-charge region of the pi-junction and somewhat later the space-charge region of the in-junction extend reducing the neutral part of the middle-region. This effect is simulated in the analog model by shortening the RC-network piece by piece. The currents at the moving borders of the network are reduced similar to the decreasing diode current during the decay period. Using this analog model the reverse recovery process of diodes with arbitrary doping profiles in the middle-region can be investigated. The model yields terminal properties and some quantities in the interior of the device, such as carrier densities and particle currents, as function of position and time. Results on the influence of forward and reverse currents, doping profile, width and carrier-lifetime in the middle-region are reported.
Starting Page	112
Ending Page	112
File Size	107513
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1968.188039
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1968-10-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Diodes Semiconductor process modeling Doping profiles Rectifiers Differential equations Charge carrier processes Charge carrier density
Content Type	Text
Resource Type	Article

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