NDLI: High-frequency transistors by the diffused-meltback process employing three impurities

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High-frequency transistors by the diffused-meltback process employing three impurities

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1956 International Electron Devices Meeting

1955 International Electron Devices Meeting

High-frequency transistors by the diffused-meltback process employing three impurities

Content Provider	IEEE Xplore Digital Library
Author	Lesk, I.A. Gonzalez, R.E.
Copyright Year	1957
Description	Author affiliation: General Electric Co., Syracuse, N. Y. (Lesk, I.A.)
Abstract	The diffused-meltback process for making transistor structures involves growing a crystal containing a donor and an acceptor impurity, cutting the crystal into pellets, melting and refreezing part of a pellet, and then diffusing. The meltback process produces through segregation a spatial discontinuity in concentrations of both impurities, with the same impurity predominating throughout the entire pellet. The diffusion process then results in the appearance of a (base) region of opposite conductivity type very close to the meltback interface. If a single donor and acceptor are used, independent control of excess impurity concentrations in emitter, base, and collector regions is not normally practicable. However, if three impurities are used (i.e., two acceptors and one donor for a germanium p-n-p transistor), they may be so chosen that a different one is predominant in each region. Some limitations on the impurity concentrations that may be obtained are inherent in the crystal growing and segregation processes, but these are not important in the fabrication of a high-frequency signal transistor.
Starting Page	117
Ending Page	117
File Size	227251
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1957.187077
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1957-11-01
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impurities Voltage Switches VHF circuits Performance gain Circuit testing Silicon Production Temperature Hafnium
Content Type	Text
Resource Type	Article

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