NDLI: Mechanisms of surface morphology formation during Ge growth on Si(100) at high temperatures

Content Provider	IEEE Xplore Digital Library
Author	Budazhapova, A.E. Shklyaev, A.A.
Copyright Year	2015
Description	Author affiliation: Novosibirsk State Tech. Univ., Novosibirsk, Russia (Budazhapova, A.E.) \|\| A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia (Shklyaev, A.A.)
Abstract	The formation of island ensembles during the Ge deposition on the Si(100) surface at high temperatures is studied using scanning tunneling and electron microscopies. It is found that the island size and shape distributions, which are known to be bimodal at the Ge growth temperatures below 700°C, become monomodal at temperatures above 800°C. The strain relaxation processes at temperatures below 800°C usually occurs by means of the mass transfer from small to neighboring large islands, leading to highly inhomogeneous island distributions in size and along the surface. The monomodal island size distribution is formed under a Ge deposition flux in the conditions of a long deposited-atom surface diffusion length, which provides the atom incorporation in the most preferable surface places. This produces islands to be uniform in size and homogeneously distributed along the surface.
Starting Page	12
Ending Page	15
File Size	1225244
Page Count	4
File Format	PDF
ISBN	9781467367189
ISSN	2325419X
e-ISBN	9781467367196
DOI	10.1109/EDM.2015.7184476
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-29
Publisher Place	Russia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Surface morphology Surface treatment Temperature distribution Silicon Three-dimensional displays Temperature dependence Morphology bimodal growth Ge/Si heterostructures surface morphology
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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