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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ischenko, D.V. Klimov, A.E. Neizvestny, I.G. Paschin, N.S. Sherstyakova, V.N. Shumsky, V.N. |
| Copyright Year | 2014 |
| Description | Author affiliation: Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia (Ischenko, D.V.; Klimov, A.E.; Neizvestny, I.G.; Paschin, N.S.; Sherstyakova, V.N.; Shumsky, V.N.) |
| Abstract | In the present study, we examined the sensitivity of PbSnTe:In to radiation in the very-long-wave infrared spectral region. Experimental data on the dynamics of increase of the photocurrent in PbSnTe:In films illuminated with radiation emitted by a model blackbody are reported. The range of radiator temperatures was 50 to 75 K, and the temperature of examined samples was 4.2 K. Photocurrent relaxation curves measured on turning-on and turning-off of the illumination are presented. Specific features of charge-carrier transport at helium temperatures in samples dominated by contact injection of carriers are discussed. The response of the current to blackbody-radiator temperature modulation was studied. The temperature sensitivity has been estimated as amounting to ~ 44 nA/K. |
| Starting Page | 85 |
| Ending Page | 89 |
| File Size | 815395 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781479946693 |
| ISSN | 2325419X |
| e-ISBN | 9781479946686 |
| DOI | 10.1109/EDM.2014.6882483 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-06-30 |
| Publisher Place | Russia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature measurement Temperature sensors Sensitivity Tin Films Physics Lead photocurrent PbSnTe:In narrow-gap semiconductor contact injection traps relaxation |
| Content Type | Text |
| Resource Type | Article |
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