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Content Provider | IEEE Xplore Digital Library |
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Author | Korchagina, T.T. Cherkova, S.G. Kachurin, G.A. |
Copyright Year | 2006 |
Description | Author affiliation: Institute of Semiconductor Physics SO RAN, Novosibirsk, Russia (Cherkova, S.G.; Kachurin, G.A.) || Student Member, IEEE, Novosibirsk State Technical University, Novosibirsk, Russia (Korchagina, T.T.) |
Abstract | The influence of an ion irradiation on the properties of light-emitting silicon NC has been examined in conditions when accelerated ions F passed the studied layer through. For introduction of radiation defects in NC the layers were irradiated with 200 keV F/sup +/ ions within the dose range of 10/sup 12/-10/sup 14/ cm/sup -2/. The samples were characterized by PL, and their structural properties - by HREM and Raman spectroscopy. It is shown, that for PL quenching there is enough to create in NC individual displacements (1-5 displacement/NC). However NC retain crystal structure even at the doses exceeding the doses of PL quenching for about an order (up to 50 displacement/NC). At such doses the electron microscopy reveals in NC a heavily damaged lattice. |
Starting Page | 64 |
Ending Page | 66 |
File Size | 1233890 |
Page Count | 3 |
File Format | |
ISBN | 5778206461 |
ISSN | 18153712 |
DOI | 10.1109/SIBEDM.2006.230308 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2006-07-01 |
Publisher Place | Russia |
Access Restriction | Subscribed |
Rights Holder | Novosibirsk State Technical University |
Subject Keyword | Silicon Nanocrystals Raman scattering Annealing Atomic measurements Electron microscopy Temperature Spectroscopy Physics Radio access networks |
Content Type | Text |
Resource Type | Article |
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