NDLI: Radiation Defects in the Light - Emitting Silicon Nanocrystals

Content Provider	IEEE Xplore Digital Library
Author	Korchagina, T.T. Cherkova, S.G. Kachurin, G.A.
Copyright Year	2006
Description	Author affiliation: Institute of Semiconductor Physics SO RAN, Novosibirsk, Russia (Cherkova, S.G.; Kachurin, G.A.) \|\| Student Member, IEEE, Novosibirsk State Technical University, Novosibirsk, Russia (Korchagina, T.T.)
Abstract	The influence of an ion irradiation on the properties of light-emitting silicon NC has been examined in conditions when accelerated ions F passed the studied layer through. For introduction of radiation defects in NC the layers were irradiated with 200 keV F/sup +/ ions within the dose range of 10/sup 12/-10/sup 14/ cm/sup -2/. The samples were characterized by PL, and their structural properties - by HREM and Raman spectroscopy. It is shown, that for PL quenching there is enough to create in NC individual displacements (1-5 displacement/NC). However NC retain crystal structure even at the doses exceeding the doses of PL quenching for about an order (up to 50 displacement/NC). At such doses the electron microscopy reveals in NC a heavily damaged lattice.
Starting Page	64
Ending Page	66
File Size	1233890
Page Count	3
File Format	PDF
ISBN	5778206461
ISSN	18153712
DOI	10.1109/SIBEDM.2006.230308
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-07-01
Publisher Place	Russia
Access Restriction	Subscribed
Rights Holder	Novosibirsk State Technical University
Subject Keyword	Silicon Nanocrystals Raman scattering Annealing Atomic measurements Electron microscopy Temperature Spectroscopy Physics Radio access networks
Content Type	Text
Resource Type	Article

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