NDLI: The XXI century as the century of microsystem technologies

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Volume 2 - 2002

Volume 1 - 2002

2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings (Cat. No.02EX518)

The XXI century as the century of microsystem technologies

Problems of semiconductor element base for the quantum computer

Prospects of SOI technology evolution

Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure

Peculiarities of 3D nanoisland formation on vicinal surfaces during MBE process (simulation)

Nanotubule formation by heterogeneous nucleation of silver along etched nuclear tracks in polyethylene terephthalate (PET)

Characterization of etched tracks and nanotubules by ion transmission spectrometry

The effect of external mechanical stress on the fullerite conductivity

Autoemission properties of carbon nanotubes

X-ray spectroscopic study of carbon produced at destruction of field cathodes from carbon nanotubes

An aplication of conform mapping to the calculation of FTSP transducer with various geometrical form

New mechanism of nanosized InAs grains formation on porous silicon surface

Tunneling of electrons through heterostructures with quantum rings in a magnetic field

Magnetotransport properties of two-dimensional electron gas on cylindrical surface

Capapitance-voltage characteristics of Al/SiO/sub 2//Si structures with embedded Si nanocrystals

Simulation of initial stages of Ge nano-island nucleation on Si (111) surface

The model of the thermoisolated area of the thermoresistive transducer

Determination of the transport parameters in two-dimensional semiconductor systems and thin films by contactless microwave methods

The linear piezoresistance effect in p-Ge/sub x/Si/sub 1-x/ alloys

The 3D-model of anisotropic conductivity in the strained n-silicon

The modeling of a radiated printed structure

Surface structure and optical properties of Ti-diffused LiNbO/sub 3/ waveguides

Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit

Micromechanical thermal converter of power alternating current

Micromechanical calibrating leak made by methods of microtechnologies

Experimental research of silicon flowmeters based on piezoresistance effect

Design and optimization of the thermovision microscope

Influence of radiation on current-voltage characteristics of CaF/sub 2//Si heterostructures

A construction and circuitry realization of the combined pressure-temperature sensor based on the shear piezoresistive effect

The investigation of main characteristics of membrane thermal sensors based on silicon

Temperature dependences of fibre-optical sensors of mechanical values

The device of digital data processing from the fibre-optical sensor of mechanical values

Thin films of solid electrolyte BaO(CeO/sub 2/)/sub 0.9/(Nd/sub 2/O/sub 3/)/sub 0.1/

Features of anisotropic etching of silicon

Prospects of using Si/CaF/sub 2/ structures in pressure sensors

Losing of the chemically active particles in plasma CF/sub 2/Cl/sub 2//O/sub 2/

Mathematical model of predicting and managing radio transmitting devices manufacturing risk

Index of authors

IEEE-Siberian Conference on Electron Devices and Materials. SIBEDEM - 2002. Proceedings (Cat. No.02EX529)

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469)

Siberian Russian Student Workshops and Tutorials on Electron Devices and Materials (Cat. No.00EX416)

The XXI century as the century of microsystem technologies

Content Provider	IEEE Xplore Digital Library
Author	Gridchin, V.A.
Copyright Year	2002
Description	Author affiliation: Novosibirsk State Tech. Univ., Russia (Gridchin, V.A.)
Abstract	This paper reports on the history of microelectromechanical devices and microsystem technologies. In the list of mostly important advantages of the XX century the appearance of new direction of technology have stayed almost unnoticed. In American literature, "the MEMS is the way making things" (Maluf, 2000). The "things" can be quite various. They can perceive the information (to make sensing) to proceed it and to have an effort on physical parameters of the macro system (to make actuation). The Microsystem technology have, at least, three main advantages, they are: 1) the technology of mass production of more and more complex systems with simultaneous decreasing of the cost and increasing the reliability; 2) the interdisciplinary technology which allows to generalize in the single chip or system the various fields of science and technology; and 3) the third and main advantage consists in the fact that the microsystem technology provides the production of samples. In this paper, the main attention will be devoted to actuators.
File Size	1296160
File Format	PDF
ISBN	5778203802
DOI	10.1109/SREDM.2002.1024266
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-07-01
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Novosibirsk State Technical University
Subject Keyword	Micromechanical devices Microelectronics Signal processing Monitoring Actuators Intelligent sensors Nuclear weapons History Mass production Costs
Content Type	Text
Resource Type	Article

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