NDLI: Estimation on magnetic near field noise from PCB by FDTD implemented nonlinear switching transistor

Content Provider	IEEE Xplore Digital Library
Author	Kasuga, T. Tanaka, M. Inoue, H.
Copyright Year	2002
Description	Author affiliation: Dept. of Electr. & Electron. Eng., Akita Univ., Japan (Kasuga, T.; Tanaka, M.; Inoue, H.)
Abstract	The wideband electromagnetic noise radiated from PCB model driven by a switching device is one of the EMI problems. To estimate the noise radiation quantitatively, a switching transistor is modeled by the FDTD method by using Ebers-Moll equivalent circuit, and its parameter is determined by simple measurement. The magnetic near field noise is calculated by FDTD method implemented switching transistor. The calculated result of the switching voltage by FDTD method corresponds to the SPICE and experimental results. The magnetic near field noise, when the 3 MHz clock pulse is applied to the source, is calculated by FDTD method and measured and it is realized that the low frequency noise, less than 200 MHz, is large when compared with radiation efficiency S/sub 21H/. The noise simulation method using the FDTD method for the implemented switching transistor can be a very useful tool to estimate the noise radiation in the next step.
Starting Page	727
Ending Page	732
File Size	335878
Page Count	6
File Format	PDF
ISBN	0780372646
DOI	10.1109/ISEMC.2002.1032683
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic noise Finite difference methods Time domain analysis Magnetic switching Circuit noise Low-frequency noise Electromagnetic interference Magnetic field measurement Noise measurement Pulse measurements
Content Type	Text
Resource Type	Article

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