NDLI: Modeling the radiated emissions from microprocessors and other VLSI devices

Content Provider	IEEE Xplore Digital Library
Author	Slattery, K.P. Muccioli, J.P. North, T.M.
Copyright Year	2000
Description	Author affiliation: Intel Corp., Hillsboro, OR, USA (Slattery, K.P.)
Abstract	This paper presents a heuristic model for describing radiated emissions from microprocessors by considering the emissions spectrum to be that of an excited, or driven, electron gas. The main idea is derived from a modification of the classical Maxwell-Boltzmann distribution of molecular velocities in an ideal gas. In this paper, that procedure is applied to the free electrons in a conducting surface, where the electrons are assumed to be in a gas state residing over the surface of the conductor. Using the conductor volume, and the excitation signal characteristics, a distribution is found that roughly corresponds to measured distributions found in microprocessors. The derived equation is applied for each event risetime, I/O switching and internal switching, and summed.
Starting Page	163
Ending Page	168
File Size	346693
Page Count	6
File Format	PDF
ISBN	0780356772
DOI	10.1109/ISEMC.2000.875556
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-08-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microprocessors Very large scale integration TEM cells Integrated circuit measurements Maxwell equations Frequency Electrons Conductors Automotive engineering Application specific integrated circuits
Content Type	Text
Resource Type	Article

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