NDLI: Electrical properties of MIS diodes with insulating Langmuir-Blodgett thin films

Content Provider	IEEE Xplore Digital Library
Author	Kaneko, F. Shibata, M. Kobayashi, S.
Copyright Year	1988
Description	Author affiliation: Niigata Univ., Japan (Kaneko, F.; Shibata, M.; Kobayashi, S.)
Abstract	Electrical properties are investigated for metal-insulator-semiconductor diodes having Langmuir-Blodgett polydiacetylene (LB PDA) thin films. Capacitance-voltage characteristics measured for the Al-LB PDA-Si (MIS) diodes show reasonable capacitances for the accumulation. The C-V curves show hysteresis, and flatband voltage shifts are observed under the application of bias voltages. These results show charge injection from Si in the MIS diodes. Thermally stimulated currents (TSCs) are measured for Al-LB PDA-Al metal-insulator-metal structures. TSC peaks caused by dipole polarization and charge injection are observed in the low- and high-temperature regions respectively.<>
Starting Page	220
Ending Page	226
File Size	264750
Page Count	7
File Format	PDF
DOI	10.1109/CEIDP.1988.26336
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-10-16
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Diodes Dielectrics and electrical insulation Metal-insulator structures Capacitance-voltage characteristics Voltage Transistors Capacitance measurement Hysteresis Current measurement Polarization
Content Type	Text
Resource Type	Article

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Electrical properties of MIS diodes with insulating Langmuir-Blodgett thin films