NDLI: Standards for space charge characterization techniques

Content Provider	IEEE Xplore Digital Library
Author	Moya-Gontier, E.G. Moya, F. Si Ahmed, A. Bigarre, J. Juve, D. Jardin, C.
Copyright Year	1996
Description	Author affiliation: Fac. des Sci. de St. Jerome, Lab. SERMEC, Marseille, France (Moya-Gontier, E.G.)
Abstract	The mirror method and cathodoluminescence (CL) experiments have been used to analyse the charge trapping abilities of sapphires from two manufacturers, Rubis RSA and PI-KEM, annealed at 1000/spl deg/C, 1500/spl deg/C and 1700/spl deg/C. The results suggest that the charging of samples annealed at 1000/spl deg/C is due to defects (mainly dislocations) induced by machining and polishing, and that trap annihilations of samples annealed at 1500/spl deg/C and 1700/spl deg/C stem from the "selective migrations" of impurities and point defects to the available sinks, i.e. native dislocations and surfaces. The behaviour of the CL spectra at high annealing temperature confirms that the trapping ability is closely linked to material restructuring and defect evolutions. The analysis of the results reveals that the SEM mirror method in conjunction with CL can differentiate the charge trapping characteristics of sapphires from different origins. Therefore, it is felt that the two methods provide a framework for setting up standards applicable to space charge characterization and breakdown.
Starting Page	98
Ending Page	101
File Size	400014
Page Count	4
File Format	PDF
ISBN	0780335805
DOI	10.1109/CEIDP.1996.564604
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-10-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Space charge Annealing Dielectric materials Impurities Dielectric breakdown Mirrors Manufacturing Conducting materials Optical materials Dielectric measurements
Content Type	Text
Resource Type	Article

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