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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rambaut, C. Oh, K.H. Jaffrezik, H. Kohanoff, G. Fayeulle, S. |
| Copyright Year | 1995 |
| Description | Author affiliation: Dept. Mater. et Mecanique-Phys., Ecole Centrale de Lyon, Ecully, France (Rambaut, C.; Oh, K.H.) |
| Abstract | The mechanism of electric charge trapping can be used to describe the storage of energy in dielectric materials. The analysis of the mechanism has been obtained by the space charge physics. Technical simulation such as molecular dynamics applied to this problem allows us to complete the preceding results with a dynamic approach. We show that an excess electron introduced into the sapphire lattice (/spl alpha/-Al/sub 2/O/sub 3/) can be trapped only at a limited number of sites. The energy gained by allowing the electron to localize in these sites is of the order of 4-5 eV, in good agreement with the results of the space charge model. Displacements of the neighboring ions due to the implanted charge are shown to be localized in a small region of about 5 /spl Aring/. Detrapping is observed at 250 K. The ionic displacements turn out to play an important role in modifying the potential landscape by lowering, in a dynamical way, the barriers that cause localization at low temperature. |
| Starting Page | 680 |
| Ending Page | 683 |
| File Size | 468709 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780329317 |
| DOI | 10.1109/CEIDP.1995.483817 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-10-22 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electron traps Lattices Dielectric materials Space charge Physics Material storage Plasma temperature Dielectric breakdown Energy storage Analytical models |
| Content Type | Text |
| Resource Type | Article |
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