NDLI: Schottky barrier lowering in Mo/n-Si contacts at the reverse bias

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Schottky barrier lowering in Mo/n-Si contacts at the reverse bias

Content Provider	IEEE Xplore Digital Library
Author	Pitanov, V.S. Yakimenko, A.V.
Copyright Year	2002
Description	Author affiliation: Electron. Dept., Voronezh State Univ., Russia (Pitanov, V.S.; Yakimenko, A.V.)
Abstract	We have investigated I-V characteristics of nearly ideal Schottky contacts Mo/n-Si by power exponent method in order to determine physical phenomena which bear responsibility for reverse current soft behavior. The static and differential resistances as functions of reverse bias were studied. They allowed to obtain power exponent depending on the applied reverse bias. The absolute values of Schottky barrier lowerings were found up to 50 V. Nonlinear regression analysis was used for determining of basic effects, which give rise to barrier lowering in Mo/n-Si contacts. There are interfacial image forces and dipole effect, created by electric field increasing at the metal-semiconductor boundary owing to reverse voltage growth. The largest absolute value of barrier lowering is equal to 4.8 kT (0,12 eV) at 50 V and not exceed by 18% of zero-bias Schottky barrier height. It is established that thermoionic-field emission and barrier height inhomogeneities are not substantial in comparison with both above-mentioned effects.
Sponsorship	IEEE Electron Devices & Circuits & Syst. Soc
File Size	456091
File Format	PDF
ISBN	0780373804
DOI	10.1109/ICCDCS.2002.1004032
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-04-19
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Schottky barriers Voltage Testing Schottky diodes Temperature Semiconductor diodes Epitaxial layers Regression analysis Electron emission Electric breakdown
Content Type	Text
Resource Type	Article

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