NDLI: Charge-carrier injection, extraction and trapping dynamics in organic thin-film transistors based on different organic semiconductors evaluated by displacement current measurements

Content Provider	IEEE Xplore Digital Library
Author	Bisoyi, S. Rodel, R. Zschieschang, U. Takimiya, K. Klauk, H. Tiwari, S.P.
Copyright Year	2014
Description	Author affiliation: Max Planck Inst. for Solid State Res., Stuttgart, Germany (Rodel, R.; Zschieschang, U.; Klauk, H.) \|\| Dept. of Appl. Chem., Hiroshima Univ., Higashi-Hiroshima, Japan (Takimiya, K.) \|\| Centre of Excellence in Inf. & Commun. Technol. (ICT), Indian Inst. of Technol. (IIT) Jodhpur, Jodhpur, India (Bisoyi, S.; Tiwari, S.P.)
Abstract	Organic thin-film transistors (TFTs) have potential as pixel drivers in flexible active-matrix organic light-emitting diode displays [1]. Hence it is essential to analyze the charge-carrier injection and extraction dynamics of organic TFTs to gain a better understanding of the trapping and detrapping at the TFT interfaces. From the current-voltage characteristics of the TFTs, many important parameters can be extracted, such as carrier mobility, threshold voltage, on/off ratio, subthreshold slope and transconductance. But to quantitatively evaluate the trapping and detrapping dynamics, displacement current measurements on two-terminal long-channel capacitors (LCCs) are far more useful [2, 3]. The cross-section and the layout of an LCC are schematically shown in Fig. 1. Unlike a TFT, an LCC has only one contact, so that carriers are injected into and extracted from the semiconductor through the same contact. To increase the signal-to-noise ratio, a very large channel length (up to 6 cm) is employed. While Liang et al. have performed displacement current measurements on pentacene-based LCCs [2,3], we report here on displacement current measurements on LCCs based on four different organic semiconductors: pentacene, dinaptho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), 2,9-didecyl-DNTT $(C_{10}-DNTT)$ and diphenyl-DNTT (DPh-DNTT). In TFTs, these semiconductors show hole mobilities ranging from 1 to 7 $cm^{2}/Vs.$ The goal of the displacement current measurements reported here is to study how the choice of the semiconductor affects the trapping and detrapping dynamics in organic TFTs.
Starting Page	73
Ending Page	74
File Size	191988
Page Count	2
File Format	PDF
ISBN	9781479954056
e-ISBN	9781479954063
DOI	10.1109/DRC.2014.6872303
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-22
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Current measurement Thin film transistors Semiconductor device measurement Voltage measurement Threshold voltage Displacement measurement Organic semiconductors
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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