NDLI: Low work-function TaN-metal gate with Gadolinium oxide buffer layer on Hf-based dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Thareja, G. Se Jong Rhee Huang-Chun Wen Harris, R. Majhi, P. Byoung Hun Lee Lee, J.C.
Copyright Year	2006
Description	Author affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758 (Thareja, G.; Se Jong Rhee; Lee, J.C.) \|\| SEMATCH, TX. Tel: (512)779-9707, Fax: (512)471-5652, gthareja@mail.utexas.edu (Huang-Chun Wen; Harris, R.; Majhi, P.; Byoung Hun Lee)
Abstract	Reduction in effective work function (EWF) of mid gap-TaN metal gate electrode with Gadolinium (Gd2O3) buffer layer in Hafnium based high-K gate stack has been demonstrated. EWF of 4.2eV was achieved for TaN with a bi-layer arrangement of Gd2O3/HfSiOx dielectric. By using Gd-Si co-sputtered layer on HfO2, a reduction in EWF to NMOS compatible EWF of 4.05eV was obtained. NMOSFETs with improved output current, transconductance, and channel electron mobility highlight the approach of using Gadolinium in the gate stack.
Starting Page	93
Ending Page	94
File Size	2237650
Page Count	2
File Format	PDF
ISBN	0780397487
ISSN	15483770
DOI	10.1109/DRC.2006.305134
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-06-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Buffer layers Hafnium oxide High K dielectric materials High-K gate dielectrics Personal digital assistants Silicon Electrodes MOSFETs MOS devices Transconductance
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics

Manipulating interface dipoles of opposing polarity for work function engineering within a single metal gate stack

NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric

Reliability Assessment on Highly Manufacturable MOSFETs with Metal Gate and Hf based Gate Dielectrics

Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics

Metal gate electrodes for rare earth oxide high-k dielectrics

Schottky s/d MOSFETs with high-K gate dielectrics and metal gate electrodes

The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics

Gate Leakage Properties of MOS Devices with Tri-Layer High-k Gate Dielectric

Low work-function TaN-metal gate with Gadolinium oxide buffer layer on Hf-based dielectrics

Similar Documents

NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics

Manipulating interface dipoles of opposing polarity for work function engineering within a single metal gate stack

NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric

Reliability Assessment on Highly Manufacturable MOSFETs with Metal Gate and Hf based Gate Dielectrics

Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics

Metal gate electrodes for rare earth oxide high-k dielectrics

Schottky s/d MOSFETs with high-K gate dielectrics and metal gate electrodes

The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics

Gate Leakage Properties of MOS Devices with Tri-Layer High-k Gate Dielectric

Low work-function TaN-metal gate with Gadolinium oxide buffer layer on Hf-based dielectrics