NDLI: Comparison of existing & proposed SOI MOSFET device structures for minimizing total dose radiation damage

Content Provider	IEEE Xplore Digital Library
Author	Parke, S.
Copyright Year	2004
Description	Author affiliation: Boise State Univ., ID, USA (Parke, S.)
Abstract	This paper compares various SOI MOSFET device structures with regard to their ability to mitigate total ionizing dose (TID) radiation effects. Three-dimensional rad-hardening of the dielectrics surrounding the channel and/or direct control of the channel surfaces is required, in order to reduce source-to-drain leakage caused by radiation-induced charges which accumulate at the dielectric interfaces surrounding the device. In addition, it is highly desirable to provide dynamic adjustment of the device's electrical characteristics in order to compensate for these TID effects as well as other wearout effects. A new, ultra-low-power SOI RF-CMOS technology from American Semiconductor that is able to operate reliably in high radiation environments is also be described. This double-gated 0.18 /spl mu/m technology permits dynamically "self-repairing" circuits, which are tolerant of large lifetime total doses of radiation. This technology also features MOSFETs and lateral BJT's with undoped channel/base regions that are appropriate for cryogenic operation.
Sponsorship	Aerosp. and Electron. Syst. Soc
Starting Page	2427
Ending Page	2430
File Size	390578
Page Count	4
File Format	PDF
ISBN	0780381556
ISSN	1095323X
DOI	10.1109/AERO.2004.1368037
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-03-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Space technology CMOS technology Protons Electron traps Integrated circuit technology Isolation technology Silicon on insulator technology Threshold voltage Ionizing radiation
Content Type	Text
Resource Type	Article
Subject	Aerospace Engineering Space and Planetary Science

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