NDLI: Formation of advanced silicides using single wafer rapid thermal furnace in the temperature range of 200/spl deg/

Content Provider	IEEE Xplore Digital Library
Author	Foggiato, J. Woo Sik Yoo Fukada, T. Murakami, T. Kitaek Kang
Copyright Year	2004
Description	Author affiliation: WaferMasters Inc., San Jose, CA (Foggiato, J.; Woo Sik Yoo; Fukada, T.; Murakami, T.; Kitaek Kang)
Abstract	Various suicides are being used as ohmic contact materials for advanced silicon technologies. Due to the requirements for low contact resistance, no linewidth dependence and minimal thermal budget, different suicides are being adopted and modified to achieve the optimum characteristics. $TiSi_{2}$ has been used to the 130 nm technology node with $CoSi_{2}$ to the 100 nm node. Recently NiSi is being used to address 90 nm technologies and beyond. The formation of the various suicides was investigated using a single wafer rapid thermal furnace (SRTF) in the temperature range of 200degC to 1000degC. Utilizing an isothermal cavity process chamber, excellent temperature repeatability and uniformity can be achieved allowing investigation of the temperature sensitivity of the silicide formation. A 2-step process was used to minimize silicon consumption and control the diffusion of metal into the underlying materials, silicon, poly-Si and amorphous Si. The above mentioned suicides were investigated as used in manufacturing and the processing limits determined
Starting Page	110
Ending Page	120
File Size	1315824
Page Count	11
File Format	PDF
ISBN	0780384776
DOI	10.1109/RTP.2004.1441945
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-28
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicides Furnaces Temperature distribution Silicon Temperature sensors Ohmic contacts Contact resistance Thermal resistance Rapid thermal processing Isothermal processes
Content Type	Text
Resource Type	Article

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