NDLI: Sn/Pd/GaAs ohmic contacts with reactive metals

Content Provider	IEEE Xplore Digital Library
Author	Machac, P.
Copyright Year	2002
Description	Author affiliation: Dept. of Solid State Eng., Inst. of Chem. Technol., Prague, Czech Republic (Machac, P.)
Abstract	The contribution deals with the problems of the Sn/Pd/GaAs contacts with a thin layer of a reactive metal - chromium, titanium and nickel. These metals react with the native oxides on the GaAs surface and affect the parameters of the contact structure. The influence of the reactive metals to the contact resistivity and to the thermal stability of prepared contact structures was followed. The best of all seems to be the chromium structure deposited at the temperature of 130/spl deg/C. This metallization reached the contact resistivity of 5.73/spl times/10/sup -6/ /spl Omega/cm/sup 2/, during the stability test at 400/spl deg/C temperature the partial deterioration of resistivity occurred only after 10 hours.
Sponsorship	Minist. Educ. Slovak Republic Slovak Univ. Technol. Bratislava Faculty of Electr. Eng. & Inf. Technol. Promos Found. IEEE Electron Devices Soc
Starting Page	55
Ending Page	58
File Size	187767
Page Count	4
File Format	PDF
ISBN	078037276X
DOI	10.1109/ASDAM.2002.1088473
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-10-16
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tin Gallium arsenide Ohmic contacts Conductivity Chromium Temperature Titanium Nickel Thermal resistance Thermal stability
Content Type	Text
Resource Type	Article

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