NDLI: Diamond and cubic boron nitride: synthesis and electronic applications

Content Provider	IEEE Xplore Digital Library
Author	Bello, I. Zhang, W.J. Chan, K.M. Chan, C.Y. Wu, Y. Meng, F. Lam, C.W. Liu, J. Luk, W.Y.
Copyright Year	2002
Description	Author affiliation: Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China (Bello, I.; Zhang, W.J.; Chan, K.M.; Chan, C.Y.; Wu, Y.; Meng, F.; Lam, C.W.; Liu, J.; Luk, W.Y.)
Abstract	This paper reviews recent progress in the deposition of diamond and cubic boron nitride (cBN) films. It aims at the effort of preparing smooth surfaces, improving crystallinity and enhancing adhesion of diamond and cBN films. The properties of these materials, multi-stage growth processes and difference in synthesis of diamond and cBN films are discussed. Resolving the nucleation and growth stages, deposition at different temperatures, post deposition treatment, possible chemistry, and the mechanisms behind are introduced as well. We report the most striking results achieved in our laboratories including the deposition of thin smooth oriented diamond film with coalescent diamond crystals and the deposition of thick cubic boron nitride films yielding well-resolved Raman spectra. The difference between the syntheses of polycrystalline and nano-crystalline diamond films are shown to be in gas phase environments. While the CH/sub 3/ radicals are responsible for the growth of polycrystalline films the CVD environment with abundant C/sub 2/ dimers results in the deposition of nanocrystalline diamond. Special attention deserves manufacturing single crystal diamond nanotips and their arrays. These single crystal diamond nano-lips have a very high aspect ratio, an apical angle of 28/spl deg/ and a radius of 5 nm. Finally, we present a review of potential and current applications of diamond in electronic areas.
Sponsorship	Minist. Educ. Slovak Republic Slovak Univ. Technol. Bratislava Faculty of Electr. Eng. & Inf. Technol. Promos Found. IEEE Electron Devices Soc
Starting Page	1
Ending Page	11
File Size	658711
Page Count	11
File Format	PDF
ISBN	078037276X
DOI	10.1109/ASDAM.2002.1088463
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-10-16
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Boron Surface treatment Crystallization Adhesives Crystalline materials Temperature Chemistry Laboratories Crystals Manufacturing
Content Type	Text
Resource Type	Article

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