NDLI: Self-consistent physical modeling of SiOx-based RRAM structures

Content Provider	IEEE Xplore Digital Library
Author	Sadi, T. Liping Wang Gerrer, L. Georgiev, V. Asenov, A.
Copyright Year	2015
Description	Author affiliation: Gold Stand. Simulations Ltd., Glasgow, UK (Asenov, A.) \|\| Device Modeling Group, Univ. of Glasgow, Glasgow, UK (Sadi, T.; Liping Wang; Gerrer, L.; Georgiev, V.)
Abstract	We apply a unique three-dimensional (3D) physics-based atomistic simulator to study silicon-rich (SiOx, x<;2) resistive switching nonvolatile memory (RRAM) devices. We couple self-consistently a simulation of ion and electron transport to the `atomistic' simulator GARAND and a self-heating model to explore the switching processes in these structures. The simulation model is more advanced than other available phenomenological models based on the resistor breaker network. The simulator is calibrated with experimental data, and reconstructs accurately the formation and rupture of the conductive filament in the 3D space. We demonstrate how the simulator is useful for exploring the little-known physics of these promising devices, and show that switching is an intrinsic property of the SiOx layer. In general, the simulation framework is useful for providing efficient designs, in terms of performance, variability and reliability, for memory devices and circuits. The simulator validity is not limited to SiOx-based devices, and can be used to study other promising RRAM systems based, e.g., on transition metal oxides.
Starting Page	1
Ending Page	4
File Size	625956
Page Count	4
File Format	PDF
ISBN	9780692515235
DOI	10.1109/IWCE.2015.7301981
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	International Wireless Communication Expo (IWCE)
Subject Keyword	Switches Silicon Resistance Mathematical model Electric fields Three-dimensional displays Heating self-heating Resistive switching nonvolatile memory (RRAM) devices Si-rich silica (SiOx) RRAMs charge transport
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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