NDLI: InAs/GaInSb/AlGaAsSb based type-II W-lasers

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2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)

2003 International Symposium on Compound Semiconductors

2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675)

Gigahertz manipulation of electron spins in semiconductor nanostructures

Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy

Field effect and localization in InGaN/GaN quantum wells

Microstructure of In/sub x/Ga/sub 1-x/N thick epitaxial layers

Growth of InN and InGaN on Si substrate for solar cell applications

X-ray diffraction imaging of wide bandgap materials

Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures

Optical and electrical manipulation of spin orientation in compound semiconductors

Ferromagnetic heterostructures for semiconductor spintronics

Electron spin splitting in polarization-doped III-nitrides

Nonmagnetic resonant tunneling spin devices

Toward III-N /spl lambda/-cavity vertical emitters: heteroepitaxy of GaN and AlN

Microstructure of polycrystalline GaN grown on silica glass by ECR-MBE

GaN nano epitaxial lateral overgrowth on holographically patterned

AlInN as high-index-contrast material for GaN-based optoelectronics

Nanotip GaN pyramids formed by polarity-selective chemical etching

Investigation of three-step epilayer growth approach of GaN thin films to minimize compensation

Growth-direction dependence of optical properties in epitaxially laterally overgrown GaN

Growth of GaN on a nanoscale-faceted Si substrate by metal-organic vapor-phase epitaxy

Two dimensional photonic crystal active and passive devices

Real-time studies of strain relaxation in InGaAs heteroepitaxy

Surface reconstructions of InGaAs layers

Characterization of MOCVD lateral epitaxial overgrown III-V semiconductor layers on GaAs substrates

Precise control of 980 nm pump lasing wavelength

Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

Electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N by Hall-effect and photoluminescence measurements

Frequency and breakdown properties of AlGaN/GaN HEMTs

Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

Electrical and optical properties of carbon-related defects in GaN

Epitaxial growth of InN on GaN by metalorganic chemical vapor deposition

High temperature GaN based Schottky diode gas sensors

Origin and length scale of carrier localisation in GaInAsN analysed by transmission electron microscopy

A simple method to determine strains in InGaNAs/GaAs quantum wells

Stress evolution and nitrogen incorporation in GaAsN films

Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 /spl mu/m

Effects of thermal annealing on GaInNAs QDs grown on GaAs [001]

Photoluminescence and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells

Low threshold, CW, room temperature 1.49 /spl mu/m GaAs-based lasers

Electron effective mass of Ga/sub 0.7/In/sub 0.3/N/sub x/As/sub 1-x/

Nanoscale characterization and mitigation of defects in nitride semiconductors

A comparison of MBE-grown and ion-implanted GaN:Er for 1.54 /spl mu/m emitters

Interface atomic arrangement between the nitride semiconductor and silicon

Correlations between In composition and tertiarybutylarsine (TBAs) flow rate in InGaNAs/GaN multiple quantum well by metalorganic chemical vapor deposition

Influence of arsenic isoelectronic Co-doping on the electronic properties of n-and p-type GaN

Quantum dot photonic devices for lightwave communications

Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots

Temperature-dependent orientation of intraband dipoles of self-assembled InAs/GaAs quantum dot ensembles

Selective growth of InAs quantum dots on patterned GaAs substrate by metal-organic chemical vapor deposition

Transient processes and optical spectra in self-assembled quantum dots

Current conduction paths in GaN

Laser direct write for wide-band gap semiconductor device fabrication: doping

Electron injection in III-nitride semiconductors

Exfoliation of GaN layers using hydrogen implantation

Room temperature ferromagnetism in (Zn,Cr) Te

Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors

Magnetic anisotropy and structural properties of ultrathin epitaxial Fe films on GaAs(001) and GaAs(113)A substrates

Structural and magnetic properties of Er doped GaN

P-doping of zinc oxide using phosphorous oxide and thermal annealing

From sunscreen and diaper ointment to wide band gap optoelectronics: ZnO-based homoepitaxial device technology

Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO

InAs quantum dots infrared photodetectors

Effects of thin GaAs cap layer on optical properties of InAs/InGaAs/InP quantum dot

Room-temperature electroluminescence at 1.3 and 1.5 /spl mu/m from Ge/Si quantum-dot light-emitting diode

Inorganic tetrapod nanocrystals: synthesis, structure and properties

Three-color InAs/InGaAs quantum dots-in-a-well infrared photodetectors

Nitride UV emitters

High efficiency deep UV light emitting diodes at 285 nm

Multiple-wavelength InGaN-based LED arrays

High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates

Milliwatt operation of sapphire based 340 nm UV LEDs with quaternary AlInGaN quantum wells at room and cryogenic temperatures

GaN vertical-cavity surface-emitting laser with an extended cavity

Rare earth doped GaN electroluminescent devices

Luminescence efficiency of InGaN multiple quantum well UV-LEDs

One dimensional heterostructures and resonant tunneling in III-V nanowires

Catalyst-free GaAs nanowires grown by MBE

Multiline photoluminescence spectra of lattice-matched GaAs/AlGaAs quantum dots

Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering

Polarization dependent inter-subband transitions in n-type InGaAs/GaAs and p-type SiGe/Ge self assembled dots: theoretical studies

Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

AlGaN-GaN HEMTs: material, device, circuit technology and applications

Scattering limitations on electron transit velocity in AlGaN/GaN HEMTs

Effect of surface passivation on breakdown of AlGaN/GaN HEMTs

Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation

Optical detection of coherent GHz phonon generation in a high power GaN/AlGaN microwave FET

High speed, low power electronics using Sb-based semiconductors

Fabrication processes for high performance InAs-based HBTs

A comparison of dry plasma and wet chemical passivation of GaSb photodiodes

Oxides beyond SiO/sub 2/: strategies to integrate oxides epitaxially with silicon

Characterization techniques for high-mobility strained Si CMOS

Micro-Raman scattering study on strain induced by compositional variation in single crystalline Si/sub 1-x/Ge/sub x/ discs

Monolithically integrated InP-based 1.55 /spl mu/m photoreceivers using V-grooved RFPD/HBT integration technology

Radiation-resistant and high-efficiency InGaP/InGaAs/Ge 3-junction solar cells

A reflecting mirror facet (RMF) photodiode suitable for surface-mountable optical package

Frequency-tunable terahertz wave generation via excitation of phonon-polaritons in GaP

Ion implanted InP and InGaAs for ultrafast optoelectronic applications

RM/sup 3/ integration of indium phosphide based 1.55 /spl mu/m p-i-n photodetectors with silicon CMOS optical clock receiver circuits

High-performance InGaP power HBT technologies for wireless applications

Backside-emitter-structure C-up GaAs HBTs for small power amplifiers

Low turn-on voltage InP/In/sub 0.7/Ga/sub 0.3/As/InP double heterojunction bipolar transistors

Effects of device design on the thermal properties of InP-based HBTs

A look into the future for SiGe HBTs

Characterization and modeling of the anomalous dip in scattering parameter S/sub 11/ of InGaP/GaAs HBTs

Progress of Sb-based type-II mid-IR interband cascade lasers

InAs/GaInSb/AlGaAsSb based type-II W-lasers

Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants

Determination of GaAs/GaAsSb heterojunction conduction band offset

Bulk growth of compositionauy homogeneous III-V ternary anoys

HEMTs with ultrahigh cutoff frequency

DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In/sub 0.51/Ga/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs power pHEMTs

Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET

Design and realization of resonant tunneling permeable base transistors

Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs by simulations with a quantum hydrodynamic transport model

Reliability of BCB passivated InAlAs/InGaAs HEMTs under thermal stress

Bipolar cascade lasers at emitting wavelengths near 2 /spl mu/m

Analysis of high-temperature continuous wave operation of type-II interband cascade lasers

A picosecond passively mode-locked vertical extended cavity surface emitting diode laser

Precise aperture control of oxidized GaAs surface emitting laser using in-situ monitered oxidation process

ISCS 2003 Author Index

2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

InAs/GaInSb/AlGaAsSb based type-II W-lasers

Content Provider	IEEE Xplore Digital Library
Author	Mermelstein, C. Schmitz, J. Kiefer, R. Walther, M. Wagner, J.
Copyright Year	2003
Description	Author affiliation: Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany (Mermelstein, C.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J.)
Abstract	In this paper, we study electrically pumped InAs/GaInSb/AlGaAsSb based type-II W-lasers were grown by solid-source on (100) GaSb:Te substrates, using valved cracker effusion cells for the supply of the group V elements. The active region, composed of typically 5 to 10 repetitions of the InAs/GaInSb/InAs W-building block separated by AlGaAsSb interperiod barriers, is surrounded by AlGaAsSb separate confinement layers forming the core of the optical waveguide with a total thickness of 1.3 /spl mu/m.
Starting Page	213
Ending Page	214
File Size	115454
Page Count	2
File Format	PDF
ISBN	0780378202
DOI	10.1109/ISCS.2003.1239981
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence Optical waveguides Quantum cascade lasers Optical materials Diode lasers Molecular beam epitaxial growth Threshold current Quantum well lasers Semiconductor lasers Composite materials
Content Type	Text
Resource Type	Article

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