NDLI: Design of broad-band, low-noise microwave transistor amplifiers with input and output VSWR constraints using CAD tools

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Volume 1 - 1994

Proceedings of 36th Midwest Symposium on Circuits and Systems

[1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems

[1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems

Proceedings of the 33rd Midwest Symposium on Circuits and Systems

Proceedings of the 32nd Midwest Symposium on Circuits and Systems,

Design of broad-band, low-noise microwave transistor amplifiers with input and output VSWR constraints using CAD tools

Content Provider	IEEE Xplore Digital Library
Author	Tanzi, N.
Copyright Year	1994
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA (Tanzi, N.)
Abstract	A methodology which permits one to determine the required input and output termination impedances of a given transistor such that the amplifier can simultaneously meet power gain, noise figure, and input and output VSWR constraints is described. To support the proposed method, an amplifier design example at 2 GHz with power gain, noise figure, and input and output VSWR constraints is presented. The applicability of the design methodology to the design of broad-band, low-noise amplifier design is demonstrated with three examples.
Starting Page	1215
Ending Page	1219
File Size	333038
Page Count	5
File Format	PDF
ISBN	0780324285
DOI	10.1109/MWSCAS.1994.519027
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-08-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microwave transistors Microwave amplifiers Low-noise amplifiers Noise figure Power amplifiers Transducers Impedance matching Equations Design methodology Process design
Content Type	Text
Resource Type	Article

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