NDLI: A high-speed integrated optoelectronic photoreceiver

Content Provider	IEEE Xplore Digital Library
Author	Morikuni, J.J. Ketterson, A.A. Tong, M. Seo, J.-M. Nummila, K. Kang, S.M. Adesida, I. Cheng, K.Y.
Copyright Year	1992
Description	Author affiliation: Illinois Univ., Urbana, IL, USA (Morikuni, J.J.; Ketterson, A.A.; Tong, M.; Seo, J.-M.; Nummila, K.; Kang, S.M.; Adesida, I.; Cheng, K.Y.)
Abstract	The authors present a high-speed optoelectronic photoreceiver, specifically designed for use in optical interconnections. This photoreceiver is composed of an MSM (metal-semiconductor-metal) photodetector coupled with a HEMT (high electron mobility transistor) transimpedance amplifier. Through the use of the lattice-mismatched materials system of AlGaAs/InGaAs/GaAs and quarter-micron gate length HEMTs, speeds in excess of 4 GHz as well as transimpedance gains of over 50 dB were achieved, well matching the results of the iSMILE simulator. The high performance of the pseudomorphic HEMTs was reflected in their transit frequency of f/sub 1/=66 GHz. This design also included an MSM photodetector with a measured dark current of less than 10 nA.<>
Starting Page	1368
Ending Page	1371
File Size	392145
Page Count	4
File Format	PDF
ISBN	0780305930
DOI	10.1109/ISCAS.1992.230249
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-05-10
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High speed integrated circuits HEMTs Photodetectors Optical design Optical interconnections MODFETs Optical amplifiers Optical materials Indium gallium arsenide Gallium arsenide
Content Type	Text
Resource Type	Article

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