NDLI: Geometry and layout dependency of high frequency performance of high speed bipolar transistors

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Proceedings of the Bipolar Circuits and Technology Meeting

Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

Geometry and layout dependency of high frequency performance of high speed bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	van Wijnen, P.J. de Jong, J.L. van Schravendijk, B.
Copyright Year	1990
Description	Author affiliation: Phillips Res. & Dev. Center, Sunnyvale, CA, USA (van Wijnen, P.J.; de Jong, J.L.; van Schravendijk, B.)
Abstract	Experimental data on the geometry and layout dependence of the high-frequency performance of single polysilicon bipolar transistors are presented. It is shown that small-signal high-frequency measurements provide quantitative information that can be used for the optimization of device structures and device layout. It is determined that for this technology the optimum emitter sizes are in the range of S/sub e/ approximately=1 mu m by L/sub e/=2-4 mu m. These results illustrate the importance of accurate small-signal high-frequency characterization as a tool for the optimization of the geometry and layout of bipolar transistors. It quantifies how much one can gain or lose by adopting certain device sizes and design rules.<>
Starting Page	110
Ending Page	113
File Size	467590
Page Count	4
File Format	PDF
DOI	10.1109/BIPOL.1990.171139
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-09-17
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Geometry Bipolar transistors Solid modeling Frequency measurement Signal processing Research and development Circuit simulation Capacitance Capacitance-voltage characteristics Semiconductor device modeling
Content Type	Text
Resource Type	Article

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