NDLI: Accurate I-V Characterization of GaAs Heterojunction Bipolar Transistors Using A Precision Pulsed I-V System

Content Provider	IEEE Xplore Digital Library
Author	Stewart, Ryan Pritchett, Sam DeHaan, Michael R. Brehm, Gailon
Copyright Year	1995
Description	Author affiliation: Texas Instruments RF/Microwave Technology Center, 13510 N Central Expressway P.O. Box 655474 MS 245, Dallas, Texas 75265 (Stewart, Ryan; Pritchett, Sam; DeHaan, Michael R.; Brehm, Gailon)
Abstract	Accurate HBT I-V characterization using a precision VXI-based pulsed I-V system is presented. Narrow pulse (sub microsecond) characterization of HBTs minimizes the self-heating (thermal) effects, and trapping effects associated with I-V characterization. Long and short pulse width I-V measurements are compared, and observed thermal (conduction band and substrate) effects are discussed. This is the first accurate HBT pulsed (<1 microsecond) I-V characterization capability reported in the open literature.
Starting Page	105
Ending Page	108
File Size	197543
Page Count	4
File Format	PDF
ISBN	0780356861
DOI	10.1109/ARFTG.1995.327112
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Pulse measurements Space vector pulse width modulation Temperature Knee Radio frequency Instruments Thermal conductivity Hardware
Content Type	Text
Resource Type	Article

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Accurate I-V Characterization of GaAs Heterojunction Bipolar Transistors Using A Precision Pulsed I-V System