NDLI: Temperature Dependent Characterization of GaAs MESFETs

Content Provider	IEEE Xplore Digital Library
Author	Fernandez, Allen S. Dunleavy, Lawrence P. Martin, Julian R.
Copyright Year	1992
Description	Author affiliation: University of South Florida, Department of Electrical Engineering, 4202 E. Fowler Ave., ENG118, Tampa, FL 33620-5350, (813) 974-2369 FAX (813) 974-5250 (Dunleavy, Lawrence P.; Martin, Julian R.) \|\| University of South Florida, Department of Electrical Engineering, 4202 E. Fowler Ave., ENG118, Tampa, FL 33620-5350, (813) 974-2369 FAX (813) 974-5250; Allen Fernandez is now with Texas Instruments Company, 13510 N. Central Expressway, Dallas, TX 75265 (Fernandez, Allen S.)
Abstract	A procedure is described that uses precise on-wafer measurements, to extract accurate temperature dependent MESFET models. New results, presented here, explore the temperature dependence of small signal equivalent circuit parameters (ECPs) for some typical MESFET devices, and show excellent agreement between modelled and measured S-parameters for FETs and monolithic mm-wave amplifiers over temperature. A comparison to a new theoretically derived temperature model is also given. The presented work includes new results, on the temperature dependence of ECP elements for a 0.25mm × 400mm MESFET, and a 0.5mm × 300mm MESFET. Models based on these results are shown to produce an accurate prediction of temperature effects on FET, and FET based MMIC amplifier, small signal performance. The method can be employed to develop temperature dependent CAD foundry models for MESFETs. The information from these models can be used in concert with numerical and theoretical analyses to develop much needed fundamental understanding of temperature dependent FET behavior at microwave and millimeter-wave frequencies, and the physical device parameters that influence this behavior. As a step in this direction, experimentally observed ECP variations are correlated here with predictions from a newly developed theoretical temperature model for MESFETs.
Starting Page	157
Ending Page	170
File Size	629481
Page Count	14
File Format	PDF
ISBN	0780356861
DOI	10.1109/ARFTG.1992.327010
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence Gallium arsenide MESFETs Microwave FETs Predictive models Equivalent circuits Scattering parameters MMICs Foundries Information analysis
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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