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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bourgeois, J.M. |
| Copyright Year | 1994 |
| Description | Author affiliation: SGS-Thomson Microelectron., Schaumburg, IL, USA (Bourgeois, J.M.) |
| Abstract | Power MOSFET and IGBT gate drives often face isolation and high voltage constraints. The gate drive described uses a printed circuit board based transformer combined with the memory effect of the power MOSFET input capacitance. This transformer is a bidirectional link between the ground referred control IC and the floating gate drive. It transfers energy and signal to the gate drive, provides full duty cycle range, perfect dV/dt immunity and virtually no voltage constraint. No floating auxiliary is required for the secondary circuit. If the short circuit protection is operated, an alarm signal is transmitted back to the primary through the same transformer. This circuit is perfectly suited to drive floating and/or isolated switches in motor drives, uninterruptible power supplies and AC switches. Due to the printed winding approach, cost reduction can be expected in the transformer manufacture automation.< |
| Starting Page | 238 |
| Ending Page | 244 |
| File Size | 290160 |
| Page Count | 7 |
| File Format | |
| ISBN | 0780314565 |
| DOI | 10.1109/APEC.1994.316393 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-02-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFET circuits Power MOSFET Switching circuits Switches Manufacturing automation Insulated gate bipolar transistors Printed circuits Capacitance Nonvolatile memory Protection |
| Content Type | Text |
| Resource Type | Article |
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