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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jovanovic, M.M. Tabisz, W.A. Lee, F.C. |
| Copyright Year | 1988 |
| Description | Author affiliation: Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA (Jovanovic, M.M.; Tabisz, W.A.; Lee, F.C.) |
| Abstract | Zero-voltage switching (ZVS) is implemented using a half-bridge (HB) topology for high-frequency offline applications. Two ZVS techniques are discussed: one is a quasiresonant technique (QRC) the other a multiresonant technique (MRC). A breadboarded HB ZVS-QRC is presented which operates from a 300+or-50 V input with maximum output power of 75 W (5 V, 15 A) and an efficiency of 83.5% at low line and full load and 79.2% at high line and full load. In ZVS-MRCs, all semiconductor devices are operated with no abrupt changes of the voltage across the devices. The technique permits utilization of junction capacitances of all semiconductor devices and the transformer leakage inductance to form a multiple-resonant-tank network to implement zero-voltage switching for all semiconductor devices. Employing this technique, a HB ZVS-MRC is breadboarded with the same specifications as the HB ZVS-QRC. The efficiency of the HB ZVS-MRC is slightly lower than that of the HB ZVS-QRC, 81.7% at full load and low line and 78.5% at full load and high line.< |
| Starting Page | 23 |
| Ending Page | 32 |
| File Size | 629244 |
| Page Count | 10 |
| File Format | |
| DOI | 10.1109/APEC.1988.10547 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1988-02-01 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Zero voltage switching Switches Frequency conversion Topology Semiconductor diodes Transient response MOSFETs Switching frequency Capacitance Switching converters |
| Content Type | Text |
| Resource Type | Article |
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