NDLI: Fast thermal profiling of power semiconductor devices using Fourier techniques

Content Provider	IEEE Xplore Digital Library
Author	Nelson, J.J. Venkataramanan, G. EL-Refaie, A.M.
Copyright Year	2003
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA (Nelson, J.J.; Venkataramanan, G.; EL-Refaie, A.M.)
Abstract	Accurate prediction of temperature variation of power semiconductor devices in power electronic circuits is important to obtain optimum designs and estimate reliability levels. Temperature estimation of power electronic devices has generally been performed using transient thermal equivalent circuits. In the presence of varying load cycles, it has been typical to resort to a time domain electrical simulation tool such as P-Spice/sup TM/ or SABER/sup TM/ to obtain a time series of the temperature profiles. However, for complex and periodic load cycles, time series simulation is time consuming. In this paper, a fast fourier analysis based approach is presented for obtaining temperature profiles for power semiconductors. The model can be implemented readily into a spreadsheet or simple mathematical algebraic calculation software. The technique can be used for predicting lifetime and reliability level of power circuits easily. Details of the analytical approach and illustrative examples are presented in the paper.
Starting Page	1023
Ending Page	1028
File Size	554334
Page Count	6
File Format	PDF
ISBN	0780377680
DOI	10.1109/APEC.2003.1179342
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-02-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power semiconductor devices Power electronics Circuit simulation Temperature Power system reliability Reliability engineering Design engineering Power engineering and energy Manufacturing processes Thermal management
Content Type	Text
Resource Type	Article

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