NDLI: A high accuracy power MOSFET SPICE behavioral macromodel including the device self-heating and safe operating area simulation

Content Provider	IEEE Xplore Digital Library
Author	Maxim, A. Maxim, G.
Copyright Year	1999
Description	Author affiliation: Dept. of Electron. & Telecommun., Tech. Univ., Iasi, Romania (Maxim, A.)
Abstract	The new analog behavioral modeling features of modern SPICE simulators were used to develop a high accuracy power MOSFET macromodel, that considers the electrothermal processes and simulates the device behavior beyond the safe operating area (SOA) limits. New static equations were implemented with "in-line equation" controlled sources, in order to accurately simulate the device on-state voltage and forward transconductance. The model gives a precise description of the parasitic interelectrode capacitances, that were piecewise-linear approximated with "look-up table" controlled sources. The SOA was simulated by including the device avalanche breakdown and snapback effect. The model's parameters extraction was greatly simplified and the resulting model is portable to all the modern SPICE simulators. The simulations performed for different types of commercial power MOSFETs proved an excellent agreement with the data-sheet characteristics, giving also a reasonable analysis time, with no convergence problems.
Starting Page	177
Ending Page	183
File Size	839288
Page Count	7
File Format	PDF
ISBN	0780351606
DOI	10.1109/APEC.1999.749507
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-03-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Power MOSFET SPICE Semiconductor optical amplifiers Equations Electrothermal effects Voltage control Transconductance Parasitic capacitance Piecewise linear techniques
Content Type	Text
Resource Type	Article

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