NDLI: Radiation efficiency enhancement for dipoles placed adjacent to lossy silicon substrates

Content Provider	IEEE Xplore Digital Library
Author	Dowon Kim Peroulis, D.
Copyright Year	2012
Description	Author affiliation: School of Electrical and Computer Engineering, Purdue University, Birck Nanotechnology Center, West Lafayette, IN, USA (Dowon Kim; Peroulis, D.)
Abstract	Radiation efficiency of a dipole antenna is discussed when placed closely to a 0.11×0.11 $λe^{2}$ low-resistivity (10Ω·cm) silicon wafer. The use of a small-size floating metal layer underneath the silicon wafer is proposed for efficiency improvement. The total antenna area with the silicon wafer is 0.13×0.2 $λe^{2}.$ Co- and cross-polarized radiation patterns in H and E planes are measured with the silicon wafer placed 0.003 λe away from the dipole. Full-wave simulations reveal that placing the floating metal layer underneath the lossy silicon substrate increases the total radiated power by approximately 2×. This is validated experimentally by fabricating 3.5-GHz FR4 dipoles next to lossy silicon substrates with and without the aforementioned floating metal. Measured radiation patterns are presented for both cases and result in extracted radiation efficiencies of 72% (floating metal present) and 43% (no floating metal).
Starting Page	1
Ending Page	2
File Size	1008347
Page Count	2
File Format	PDF
ISBN	9781467304610
ISSN	15223965
e-ISBN	9781467304627
DOI	10.1109/APS.2012.6348742
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-07-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Dipole antennas Metals Substrates Antenna measurements Antenna radiation patterns Wireless communication
Content Type	Text
Resource Type	Article

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