NDLI: Prediction and measurement of boundary waves at the interface between LiNbO<sub>3</sub> and silicon

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IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control - Front cover

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2009 Rayleigh Award of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society Lawrence W. Kessler

2009 Achievement Award of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society Charles Maerfeld

2009 Distinguished Service Award of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society Reinhard Lerch

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Prediction and measurement of boundary waves at the interface between LiNbO₃ and silicon

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Prediction and measurement of boundary waves at the interface between LiNbO₃ and silicon

Content Provider	IEEE Xplore Digital Library
Author	Gachon, D. Daniau, W. Courjon, E. Laude, V. Ballandras, S. Majjad, H.
Copyright Year	1986
Abstract	Interface acoustic waves (IAWs) propagate along the boundary between two perfectly bonded solids. For a leakage- free IAW, all displacement fields must be evanescent along the normal to the boundary inside both solids, but leaky IAWs may also exist depending on the selected combination of materials. When at least one of the bonded solids is a piezoelectric material, the IAW can be excited by an interdigital transducer (IDT) located at the interface, provided one can fabricate the transducer and access the electrical contacts. We discuss here the fabrication and characterization of IAW resonators made by indirect bonding of lithium niobate onto silicon via an organic layer. In our fabrication process, IDTs are first patterned over the surface of a Y-cut lithium niobate wafer. A thin layer of SU-8 photo-resist is then spun over the IDTs and lithium niobate to a thickness below one micrometer. The SU-8-covered lithium niobate wafer then is bonded to a silicon wafer. The stack is subsequently cured and baked to enhance the acoustic properties of the interfacial resist. Measurements of resonators are presented, emphasizing the dependence of propagation losses on the resist properties. Comparison with theoretical computations based on periodic finite element/boundary element analysis allows for explanation of the actual operation of the device.
File Size	2286392
File Format	PDF
ISSN	08853010
Volume Number	57
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Lithium niobate Solids Acoustic measurements Piezoelectric transducers Fabrication Wafer bonding Silicon Resists Acoustic waves Acoustic propagation
Content Type	Text
Resource Type	Article
Subject	Acoustics and Ultrasonics Instrumentation Electrical and Electronic Engineering

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